| PART |
Description |
Maker |
| FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R |
From old datasheet system
8A/ 100V/ 0.230 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A条，100V的，0.230欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 248-501 753-110 |
2-Channel Relay Output Module AC 230 V, DC 300 V
|
List of Unclassifed Man...
|
| BSS129-TR1 |
150 mA, 230 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
VISHAY SILICONIX
|
| STI16N65M5 STU16N65M5 STP16N65M5 STF16N65M5 |
N-channel 650 V, 0.230 Ω, 12 A MDmesh V Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247
N-channel 650 V, 0.230 Ω, 12 A MDmesh?/a> V Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247
N-channel 650 V, 0.230 Ω, 12 A MDmesh?V Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247
|
STMicroelectronics
|
| 2SK3560 |
Silicon N-channel power MOSFET For PDP/For high-speed switching 30 A, 230 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SEMIX151GAR12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| XC3190-4PQ160I XC3190-4PQ208I XC3142-3TQ144C XC314 |
FPGA, 320 CLBS, 5000 GATES, 230 MHz, PQFP160
FPGA, 320 CLBS, 5000 GATES, 230 MHz, PQFP208
FPGA, 144 CLBS, 3000 GATES, 270 MHz, PQFP144
FPGA, 144 CLBS, 3000 GATES, 230 MHz, PQFP100
|
XILINX INC
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| SUP60N10-16L |
N-Channel 100-V (D-S) 175C MOSFET
From old datasheet system
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
N-Channel MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| PPF5210M |
P Channel MOSFET; Package: TO-254; ID (A): 19; RDS(on) (Ohms): 0.07; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 30 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| LT1976BIFEPBF |
High Voltage 1.5A, 200kHz Step-Down Switching Regulator with 100µA Quiescent Current; Package: TSSOP; No of Pins: 16; Temperature Range: -40°C to 85°C 4 A SWITCHING REGULATOR, 230 kHz SWITCHING FREQ-MAX, PDSO16
|
Linear Technology, Corp.
|
| PSMN034-100PS |
N-channel 100 V 34.5 m惟 standard level MOSFET in TO220.
N-channel 100 V 34.5 mΩ standard level MOSFET in TO220.
N-channel 100 V 34.5 m standard level MOSFET in TO220. 32 A, 100 V, 0.0345 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
|
